absolute maximum ratings ( t j = 25c unless otherwise specified ) symbol parameter condition ratings units v drm repetitive peak off-state voltage sine wave,50 to 60hz,gate open 600 v i t(av) average on-state current half sine wave : t c =111 c 6.4 a i t(rms) r.m.s on-state current 180 conduction angle 10 a i tsm surge on-state current 1/2 cycle, 60hz, sine wave non-repetitive 110 a i 2 t i 2 t for fusing t = 8.3ms 60 a 2 s di/dt critical rate of rise of on-state current t c = 111 c, pulse width ? 1.0 k 50 a/ k p gm forward peak gate power dissipation t c = 111 c,pulse width ? 1.0 k 5w p g(av) forward average gate power dissipation t c = 111 c, pulse width ? 1.0 k 0.5 w i fgm forward peak gate current t c =111 c, pulse width ? 1.0 k 2a v rgm reverse peak gate voltage 5.0 v t j operating junction temperature - 40 ~ 125 c t stg storage temperature - 40 ~ 150 c june, 2005. rev. 0 1/5 DCP10C60 features repetitive peak off-state voltage : 600v r.m.s on-state current ( i t(rms) = 10 a ) low on-state voltage (1.4v(typ.) @ i tm ) non-isolated type general description standard gate triggering thyristor is suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control sys- tem. standard gate silicon controlled - rectifiers to-220 1 2 3 2. anode 3.gate 1.cathode symbol ? ? ? ? i t(rms) = 66 a i tsm = 6a bv drm = 600v copyright @ d&i semiconductor co., ltd., all rights reserved.
electrical characteristics ( t c = 25 c unless otherwise noted ) symbol items conditions ratings unit min. typ. max. i drm repetitive peak off-state current v ak = v drm t c = 25 c t c = 125 c 10 200 u v tm peak on-state voltage (1) i tm = 20 a tp=380 k 1.6 v i gt gate trigger current (2) v ak = 6 v(dc), r l =10 ? t c = 25 c 15 ma v gt gate trigger voltage (2) v d = 6 v(dc), r l =10 ? t c = 25 c 1.5 v v gd non-trigger gate voltage (1) v ak = 12 v, r l =100 ? t c = 125 c 0.2 v dv/dt critical rate of rise off-state voltage linear slope up to v d = v drm 67% , gate open t j = 125c 200 v/ k i h holding current i t = 100ma, gate open t c = 25 c 20 ma r th(j-c) thermal impedance junction to case 1.3 c/w r th(j-a) thermal impedance junction to ambient 60 c/w 2/5 ? notes : 1. pulse width ? 1.0 ms , duty cycle ? 1% 2. r gk current not included in measurement. DCP10C60
-50 0 50 100 150 0.1 1 10 i gt (t o c) i gt (25 o c) junction temperature[ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -3 10 -2 10 -1 10 0 10 1 transient thermal impedance [ o c/w] time (sec) 0.51.01.52.02.53.03.5 10 0 10 1 10 2 125 o c 25 o c on-state current [a] on-state voltage [v] 012345678 40 60 80 100 120 140 160 = 180 o max. allowable case temperature [ o c] average on-state current [a] 10 -1 10 0 10 1 10 2 10 3 10 4 10 -1 10 0 10 1 i gm (2a) v gd (0.2v) p g(av) (0.5w) p gm (5w) v gm (5v) 25 o c gate voltage [v] gate current [ma] ? : conduction angle 360 ? 2 tt DCP10C60 -50 0 50 100 150 0.1 1 10 v gt (t o c) v gt (25 o c) junction temperature[ o c] 3/5 fig 1. gate characteristics fi g 2. maximum case temperature fig 3. typical forward voltage fig 4. thermal response fig 6. typical gate trigger current vs. junction temperature fig 5. typical gate trigger voltage vs. junction temperature
01234567 0 2 4 6 8 10 = 30 o = 60 o = 90 o = 120 o = 180 o max. average power dissipation [w] average on-state current [a] -50 0 50 100 150 0.1 1 10 i h (t o c) i h (25 o c) junction temperature[ o c] 4/5 DCP10C60 fig 8. power dissipation fig 7. typical holding current
dim. mm inch min. typ. max. min. typ. max. a 9.7 10.1 0.382 0.398 b 6.3 6.7 0.248 0.264 c 9.0 9.47 0.354 0.373 d 12.8 13.3 0.504 0.524 e 1.2 1.4 0.047 0.055 f 1.7 0.067 g 2.5 0.098 h 3.0 3.4 0.118 0.134 i 1.25 1.4 0.049 0.055 j 2.4 2.7 0.094 0.106 k 5.0 5.15 0.197 0.203 l 2.2 2.6 0.087 0.102 m 1.25 1.55 0.049 0.061 n 0.45 0.6 0.018 0.024 o 0.6 1.0 0.024 0.039 3.6 0.142 to-220 package dimension 1. cathode 2. anode 3. gate 5/5 DCP10C60 a b c i g l 1 m e f h k n o 2 3 j d c1.0
|
